发明名称 |
SEMICONDUCTOR STRUCTURE AND A METHOD FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a diode. The diode comprises a first doped region, a second doped region and a third doped region. The first doped region and the third doped region have a first conductivity type. The second doped region has a second conductivity type opposite to the first conductivity type. The second doped region and the third doped region are separated from each other by the first doped region. The third doped region has a first portion and a second portion adjacent to each other. The first portion and the second portion are respectively adjacent to and away from the second doped region. A dopant concentration of the first portion is bigger than a dopant concentration of the second portion. |
申请公布号 |
US2014024205(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
US201314021120 |
申请日期 |
2013.09.09 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN CHIEH-CHIH;LIN CHENG-CHI;LIEN SHIH-CHIN;WU SHYI-YUAN |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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