发明名称 Memory circuit having decoding circuits and method of operating the same
摘要 The present application discloses a memory circuit having a first decoder coupled to a first memory bank and configured to receive a plurality of address control signals and to generate a first plurality of cell selection signals responsive to the plurality of address control signals and a second decoder coupled to a second memory bank and configured to receive a plurality of inverted address control signals and to generate a second plurality of cell selection signals responsive to the plurality of inverted address control signals. The memory circuit also has an address control signal buffer coupled to the second decoder and configured to convert the plurality of address control signals into the plurality of inverted address control signals.
申请公布号 US8634268(B2) 申请公布日期 2014.01.21
申请号 US20100912971 申请日期 2010.10.27
申请人 LEE CHENG HUNG;CHEN HSU-SHUN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LEE CHENG HUNG;CHEN HSU-SHUN
分类号 G11C8/10 主分类号 G11C8/10
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