| 摘要 |
<p>PURPOSE:To obtain the titled thin film of outstanding electrical insulation useful in the electronics field as an insulation film, having recurring unit of specific structure, by accumulating on a base amphoteric polyimide precursor by Langmuir-Blodgett process. CONSTITUTION:The objective thin film having recurring unit of formula (R' is >=2C tetravalent group; R<2> is >=2C divalent group; R<3>-R<6> are each 1-30C monovalent aliphatic group, monovalent alicyclic group, monovalent group constituted by aromatic and aliphatic groups connected each other, said group substituted with halogen, nitro, amino, cyano, methoxy or acetoxy group, or H, pref. two of the R<3>-R<6> are not H or 1-11C said groups).</p> |
