发明名称 |
Gate dielectric of semiconductor device |
摘要 |
A method of fabricating a semiconductor device having a different gate structure in each of a plurality of device regions is described. The method may include a replacement gate process. The method includes forming a hard mask layer on oxide layers formed on one or more regions of the substrate. A high-k gate dielectric layer is formed on each of the first, second and third device regions. The high-k gate dielectric layer may be formed directly on the hard mask layer in a first and second device regions and directly on an interfacial layer formed in a third device region. A semiconductor device including a plurality of devices (e.g., transistors) having different gate dielectrics formed on the same substrate is also described. |
申请公布号 |
US8633536(B2) |
申请公布日期 |
2014.01.21 |
申请号 |
US201113188091 |
申请日期 |
2011.07.21 |
申请人 |
LEE DA-YUAN;HSU KUANG-YUAN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE DA-YUAN;HSU KUANG-YUAN |
分类号 |
H01L29/792;H01L21/31;H01L21/8234 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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