A semiconductor device is provided. The semiconductor device includes: a substrate; device isolation regions formed in the substrate; an impurity region formed in a region of the substrate between every two adjacent ones of the device isolation regions; a gate electrode formed on the substrate; first and second interlayer insulating films sequentially formed on the substrate; a metal interlayer insulating film formed on the second interlayer insulating film and comprising metal wiring layers; a first contact plug electrically connecting each of the metal wiring layers and the impurity region; and a second contact plug electrically connecting each of the metal wiring layers and the gate electrode, wherein the first contact plug is formed in the first and second interlayer insulating films, and the second contact plug is formed in the second interlayer insulating film.
申请公布号
US8633520(B2)
申请公布日期
2014.01.21
申请号
US20100909002
申请日期
2010.10.21
申请人
YU DONG-HEE;SUH BONG-SEOK;KIM YOON-HAE;KWON O SUNG;KWON OH-JUNG;SAMSUNG ELECTRONICS CO., LTD.;INFINEON TECHNOLOGIES AG;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
YU DONG-HEE;SUH BONG-SEOK;KIM YOON-HAE;KWON O SUNG;KWON OH-JUNG