| 摘要 |
The present invention relates to a method for separating a substrate (1) for one or more power semiconductor components comprising a) a substrate forming step forming the substrate having an electrically nonconductive insulation material (2); and b) a material removing step removing a material from an insulation material main body (2) along rupture edges (A, B, C, D, E) of the substrate wherein the amount of removal of the materials implemented at a corner area (14) where the two or more particular rupture edges meet is larger than the amount of the removal implemented at the other area (17) of the particular rupture edges. Moreover, the present invention relates to the substrate thereof. The present invention reduces the unwanted damage to the insulation material main body when separating the substrate for one or more power semiconductor components. |
