| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing short circuit of wiring, by reducing metal residue while suppressing corrosion.SOLUTION: In the method of manufacturing a semiconductor device, slurry is supplied to an abrasive pad, and a metal layer formed on the surface of a wafer is polished. The slurry contains inorganic particles, resin particles having a functional group of the same polarity as that of the inorganic particles on the surface and containing polystyrene, blended at a density of 0.001-0.1 wt% and having average particle size from 200 nm to 1 μm, an oxidizer for oxidizing the metal layer, a complex formation agent for forming an organic complex on the surface of the metal layer, and a surfactant for forming a hydrophilic film on the surface of the organic complex. The metal layer is polished while blowing gas to the abrasive pad. |
