发明名称 PROJECTION EXPOSURE METHOD
摘要 PURPOSE:To preferably transfer a pattern without displacement of a focal point by controlling the distance of a projection optical system and a substrate in response to a thin film forming state on the substrate to regulate the focal point position to always hold the system and the substrate to be transferred at optimum positions. CONSTITUTION:In a 1/5 contraction projection exposure device in which a light source is the g-beam of a mercury lamp, the elevational optimum moving distance of a state is set in response to the thickness of a resist. Here, the stage means a surface plate for installing a substrate for transferring a desired pattern, and the place where the position becomes '0' is at the position where it is normally installed. The silicon substrate formed with a resist thin film is set on a projection exposure apparatus, exposed, and set at the thickness of the film to move the stage from a reference position.
申请公布号 JPS62237725(A) 申请公布日期 1987.10.17
申请号 JP19860079110 申请日期 1986.04.08
申请人 TOSHIBA CORP 发明人 SATO TAKASHI;NONAKA MISAKO;NAKASE MAKOTO
分类号 H01L21/30;G03F7/20;G03F9/00;H01L21/027 主分类号 H01L21/30
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