| 摘要 |
PROBLEM TO BE SOLVED: To improve the image quality of an image to be formed.SOLUTION: A solid-state imaging device includes: a photoelectric conversion element 1 provided in a unit-cell region UC surrounded by an element isolation region 90 of a semiconductor substrate 150; an interlayer insulating film 92 including wiring 80 provided on a front-surface side of the semiconductor substrate 150; a color filter 118 provided on a rear-surface side of the semiconductor substrate 150 facing the front surface; a microlens 117 provided on the color filter 118 on the rear-surface side; an inner lens 31 provided between the photoelectric conversion element 1 and the color filter 118; a light-shielding layer 32 provided on the rear-surface side of the semiconductor substrate 150 and adjacent to the inner lens 31. |
