| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a satisfactory fine pattern which improves etching resistance, and to provide a developing fluid.SOLUTION: A fine pattern forming method includes: a phase separation step of forming a layer including a block copolymer in which a plurality of kinds of blocks are bonded, on a substrate, and then heating the layer for phase separation of the layer; a decomposition step of decomposing at least a portion of a phase comprised of at least one kind of blocks among the plurality of kinds of blocks constituting the block copolymer; a selective removal step of immersing the layer in a developing fluid, and selectively removing a phase including the decomposed block to form a nano structure; and an etching step of etching the substrate by using the nano structure as a mask. The developing fluid contains, as a main component, organic solvent whose vapor pressure at 25°C is less than 2.1 kPa and whose SP value (Solubility Parameter) is 7.5 to 11.5 (cal/cm), or benzene which may be replaced by alkyl group, alkoxy group or halogen atom, and further contains metal alkoxide. |
