| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of securing erasing characteristics, reducing variations in data holding characteristics, and suppressing deterioration in the data holding characteristics due to repetitive writing/erasing.SOLUTION: A nonvolatile semiconductor memory device comprises: a semiconductor substrate; a plurality of conductive layers CG and insulating layers 64 alternately laminated on the semiconductor substrate; a block insulating layer 61 formed on an inner surface of a hole 53 provided in the plurality of conductive layers and insulating layers and extending in a lamination direction; a charge storage layer 62 formed on the block insulating layer; a tunnel insulating layer 63 formed on the charge storage layer; and a semiconductor layer SP formed on the tunnel insulating layer. If the distance from a central axis of the hole to an interface between the semiconductor layer and the tunnel insulating layer is Rand the distance from the central axis of the hole to an interface between the charge storage layer and the block insulating layer is R, the following expression (3) is established. |
