| 摘要 |
PROBLEM TO BE SOLVED: To enhance gas processing efficiency of discharge injection energy by achieving both a short-pulse discharge and DC superposition, and greatly reducing high loss in a discharged gas processing device.SOLUTION: A discharge gas processing device is constituted by connecting a high-voltage storage capacitor 4 connected to a DC high-voltage power supply 5 and a discharge vessel 1 to each other by a semiconductor switch 3, and connecting a parallel resistance 2 to the semiconductor switch 3 on the side of the discharge vessel 1. A charging voltage of the capacitor 4 right before the semiconductor switch 3 turns on is set to be 1.4 times or more as large as a discharge start voltage of the discharge vessel 1, and the capacitance of the capacitor 4 is so set that a charging voltage drop in turning-on operation of the semiconductor switch 3 is 30% or less. Then a turning-on time of the semiconductor switch 3 is equalized substantially to a charging time of the discharge vessel 1 in a low-charging-voltage discharge to discharge electric charges accumulated in the discharge vessel 1, and the parallel resistance 2 is set to 1/3 or larger as large as a resistance value during a turning-off period of the semiconductor switch 3 so as to superpose a DC voltage by a leakage current with the semiconductor switch 3 off on the discharge vessel 1. |
