发明名称 |
SEMICONDUCTOR COMPONENT HAVING THROUGH-SILICON VIAS AND METHOD OF MANUFACTURE |
摘要 |
A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner. |
申请公布号 |
US2014015146(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201314033862 |
申请日期 |
2013.09.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU CHEN-HUA;CHANG CHENG-HUNG;LIAO EBIN;YU CHIA-LIN;WANG HSIANG-YI;CHANG CHUN HUA;HUANG LI-HSIEN;KUO DARRYL;WU TSANG-JIUH;CHIOU WEN-CHIH |
分类号 |
H01L23/498 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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