| 摘要 |
The present invention relates to a method for manufacturing a solar cell, comprising the amorphous penetration layer forming step, the first irradiation step, the second irradiation step and the movement step. In the amorphous penetration layer forming step, first conductive impurities are doped in a crystalline silicon substrate, and an amorphous penetration layer containing second conductive impurities from the surface of the crystalline silicon substrate to the predetermined depth is formed. In the first irradiation step, a line type first laser beam is irradiated to the amorphous penetration layer so that the amorphous penetration layer is heated to a first temperature. In the second irradiation step, a line type second laser beam, which overlaps with a portion of the first laser beam, is irradiated to the amorphous penetration layer so that the amorphous penetration layer is heated to a second temperature which is higher than the first temperature. In the movement step, the first laser beam and the second laser beam are moved together while performing the first irradiation step and the second irradiation step at the same time, and the first laser beam and the second laser beam are relatively moved regarding the crystalline silicon substrate. Thereby, the second conductive impurities are doped by recrystallizing the silicon and the second conductive impurities which are amorphous in the amorphous penetration layer. [Reference numerals] (S110) Amorphous penetration layer forming step; (S120) First irradiation step; (S130) Second irradiation step; (S140) Movement step |
