| 摘要 |
A non-volatile semiconductor storage device includes memory cells, each of which is arranged at an intersection between a first wiring and a second wiring intersecting each other. Each of the memory cells includes: a first electrode layer; a plurality of variable resistance layers laminated on the first electrode layer and functioning as variable resistance elements; a second electrode layer formed between the variable resistance layers; and a third electrode layer formed on the top one of the variable resistance layers. Each of the variable resistance layers is composed of a material containing carbon. |
