| 摘要 |
<p>A dry-etching method which features an increased select ratio of a material to be treated and the underlying material as a result of an improvement in the kinds of reaction gases. The reaction gases consist of a fluoride gas and a gas of a compound that contains hydrogen as a constituent element. It is made possible to greatly increase the etching select ratio of the material to be treated and the underlying material, preventing the underlying material from being etched. The method is adapted to the production by dry-etching of semiconductors having a silicon oxide film under the silicon nitride film.</p> |
