| 摘要 |
<p>A thin film transistor substrate according to one embodiment of the present invention comprises: a gate electrode positioned on a substrate; a gate insulating layer positioned on the gate electrode; an active layer positioned on the gate insulating layer and including metal oxide; a pixel electrode positioned on the gate insulating layer and being in contact with a lower part of one side of the active layer; an etch stopper covering the active layer and the pixel electrode and exposing an upper part of the other side of the active layer; and a source electrode positioned on the etch stopper and being in contact with the upper part of the other side of the active layer through the contact hole.</p> |
