| 摘要 |
A light emitting diode according to the embodiment comprises a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a second electrode layer which is located in the second conductive semiconductor layer direction and is electrically connected to the second conductive semiconductor layer; a first electrode layer including a main electrode which is located in one surface of the second electrode layer in the opposite direction to the second conductive semiconductor layer and at least one branch electrode which is branched from the main electrode and penetrates the second conductive semiconductor layer and the active layer to be electrically connected to the first conductive semiconductor layer; and an insulating layer which is located between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure, wherein the insulating layer consists of multiple layers in which two adjacent layers have different compositions and at least comprises a first layer and a second layer which are sequentially located from the upper direction of the light emitting diode, and wherein the second layer is non-overlapped with the side surface of the second electrode layer. |
