发明名称 |
OPTICAL SEMICONDUCTOR DEVICE HAVING RIDGE STRUCTURE FORMED ON ACTIVE LAYER CONTAINING P-TYPE REGION AND ITS MANUFACTURE METHOD |
摘要 |
A p-type cladding layer (3) of p-type semiconductor is formed over a substrate. An active layer (5) including a p-type semiconductor region is disposed over the p-type cladding layer. A buffer layer (10) of non-doped semiconductor is disposed over the active layer. A ridge-shaped n-type cladding layer (11) of n-type semiconductor is disposed over a partial surface of the buffer layer. The buffer layer on both sides of the ridge-shaped n-type cladding layer is thinner than the buffer layer just under the ridge-shaped n-type cladding layer. |
申请公布号 |
US2014017841(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201314027243 |
申请日期 |
2013.09.16 |
申请人 |
FUJITSU LIMITED |
发明人 |
YAMAMOTO TSUYOSHI;SUDO HISAO |
分类号 |
H01S5/34 |
主分类号 |
H01S5/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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