| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist material having appropriate absorption for forming a pattern on a high reflective substrate, showing a good pattern profile and adhesiveness after exposure and good filling characteristics in a stepped substrate, and having ion implantation durability upon carrying out ion implantation, and to provide a pattern forming method.SOLUTION: The positive resist material comprises: a polymeric compound having a weight average molecular weight ranging from 1,000 to 500,000 and containing a repeating unit having a structure in which a hydrogen atom of a carboxyl group is substituted with an acid-labile group having a cyclic structure; at least one novolac resin selected from substituted or unsubstituted phenolphthalein, phenol red, cresol phthalein, cresol red and thymolphthalein; and a photoacid generator. |
