METHOD FOR BONDING LED WAFER, METHOD FOR MANUFACTURING LED CHIP, AND BONDING STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a method for bonding an LED wafer, a method for manufacturing an LED chip, and a bonding structure.SOLUTION: The method of bonding an LED wafer includes the following steps. A first metal thin film is formed on an LED wafer. A second metal thing film is formed on a substrate. A bonding material layer having a melting point of about 110°C or less is formed on a surface of the first metal thing film. The LED wafer is placed on the substrate. The bonding material layer is heated at a pre-solid reaction temperature for a pre-solid time to perform a pre-solid reaction. The bonding material layer is heated at a diffusion reaction temperature for a diffusing time to perform a diffusion reaction. The melting points of a first and a second inter-metallic compound layers after the diffusion reaction are higher than about 110°C.