Integrated circuit stack with integrated electromagnetic interference shielding
摘要
<p>An integrated circuit system (201) includes a first device wafer (203) having a first semiconductor layer (205) proximate to a first metal layer including a first conductor disposed within a first metal layer oxide (207) . A second device wafer (211) having a second semiconductor layer (213) proximate to a second metal layer including a second conductor is disposed within a second metal layer oxide (215) . A frontside (235) of the first device wafer is bonded to a frontside (237) of the second device wafer at a bonding interface (223). A conductive path (225, 227) couples the first conductor (209, 219) to the second conductor (217, 221) through the bonding interface. A first metal EMI shield (231) is disposed in one of the first metal oxide layer and second metal layer oxide layer. The first EMI shield is included in a metal layer of said one of the first metal oxide layer and the second metal layer oxide layer nearest to the bonding interface.</p>
申请公布号
EP2685503(A2)
申请公布日期
2014.01.15
申请号
EP20130172952
申请日期
2013.06.20
申请人
OMNIVISION TECHNOLOGIES, INC.
发明人
MAO, DULI;TAI, HSIN-CHIH;QIAN, YIN;DAI, TIEJUN;RHODES, HOWARD E.;YANG, HONGLI