SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF

摘要

The present invention provides a new semiconductor device and a driving method thereof. The present invention electrically connects a node (volatility) which is properly re-recorded by calculation processing and maintains data to a node which stores the data through a source and a drain of a transistor in which a channel is formed on an oxide semiconductor layer. The transistor also has low off current. Therefore, that an electric charge is leaked from the latter node through the transistor is almost never. As a result, data is maintained while the supply of electric source voltage is stopped in the latter node. A unit which sets an electric potential of the latter node as a predetermined electric potential is provided. Specifically, a unit which supplies an electric potential corresponding to 1 or 0 which is data stored in the latter node from a previous node to the latter node is provided. [Reference numerals] (AA) Start; (BB) End; (S1) Initialization of electric potential of a node(Node_2); (S2) Data storage; (S3) Stop of power voltage supply; (S4) Resumption of power voltage supply; (S5) Restoration of data