发明名称 Output stage formed inside and on top of an SOI-type substrate
摘要 A method for controlling an output amplification stage comprising first and second complementary SOI-type power MOS transistors, in series between first and second power supply rails, the method including the steps of: connecting the bulk of the first transistor to the first rail when the first transistor is maintained in an off state; connecting the bulk of the second transistor to the second rail when the second transistor is maintained in an off state; and connecting the bulk of each of the transistors to the common node of said transistors, during periods when this transistor switches from an off state to an on state.
申请公布号 US8629721(B2) 申请公布日期 2014.01.14
申请号 US201113333862 申请日期 2011.12.21
申请人 SOUSSAN DIMITRI;MAJCHERCZAK SYLVAIN;STMICROELECTRONICS SA 发明人 SOUSSAN DIMITRI;MAJCHERCZAK SYLVAIN
分类号 H03F3/16;H03F3/26 主分类号 H03F3/16
代理机构 代理人
主权项
地址