发明名称 |
Detection device comprising a rugged test with dual transistor |
摘要 |
The detection device comprises a photodetector provided with first and second terminals. A readout circuit has an input coupled to the first terminal of the photodetector. A bias circuit imposes a bias on the terminals of the photodetector. A test circuit delivers a test current to the photodetector. The test circuit comprises a first transistor through which the test current flows. The first transistor presents a first main electrode connected to the input of the readout circuit and configured so as to have a junction diode opposing flow of the charge carriers when the photodetector is short-circuited. |
申请公布号 |
US8629391(B2) |
申请公布日期 |
2014.01.14 |
申请号 |
US201113313526 |
申请日期 |
2011.12.07 |
申请人 |
LEFOUL XAVIER;SOCIETE FRANCAISE DE DETECTEURS INFRAROUGES-SOFRADIR |
发明人 |
LEFOUL XAVIER |
分类号 |
H01J40/14 |
主分类号 |
H01J40/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|