发明名称 Detection device comprising a rugged test with dual transistor
摘要 The detection device comprises a photodetector provided with first and second terminals. A readout circuit has an input coupled to the first terminal of the photodetector. A bias circuit imposes a bias on the terminals of the photodetector. A test circuit delivers a test current to the photodetector. The test circuit comprises a first transistor through which the test current flows. The first transistor presents a first main electrode connected to the input of the readout circuit and configured so as to have a junction diode opposing flow of the charge carriers when the photodetector is short-circuited.
申请公布号 US8629391(B2) 申请公布日期 2014.01.14
申请号 US201113313526 申请日期 2011.12.07
申请人 LEFOUL XAVIER;SOCIETE FRANCAISE DE DETECTEURS INFRAROUGES-SOFRADIR 发明人 LEFOUL XAVIER
分类号 H01J40/14 主分类号 H01J40/14
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