MEMORY DEVICE, SYSTEM HAVING THE SAME, AND METHOD FOR MANUFACTURING THE SAME

摘要

A memory device comprises a memory cell array which includes normal memory cells arranged in a matrix form, and a sense amplifier array which includes sense amplifiers which amplify signals outputted from each of the normal memory cells. A part of the sense amplifiers have different sizes to obtain different sensing performance according to a layout. The size is determined according to at least one of the channel length or the channel width of a MOS transistor included in each sense amplifier.