| 摘要 |
A production method for a semiconductor device having: a step in which a conductor layer (7) and a first semiconductor layer (5a) including donor impurities or acceptor impurities are formed upon a first semiconductor substrate; a step in which a second insulating layer (8) is formed so as to cover the first semiconductor layer (5a); a step in which the thickness of the first semiconductor substrate (9) is reduced to a prescribed thickness; a step in which a columnar semiconductor (1a) having a columnar structure is formed from the first semiconductor substrate upon the first semiconductor layer (5a); a step in which a first semiconductor area (6a) is formed on the columnar semiconductor (1a) by scattering impurities from the first semiconductor layer (5a); and a step in which pixels for a solid-state imaging device are formed using the columnar semiconductor (1a) after the impurities have been scattered. |
