| 摘要 |
PURPOSE: To obtain a positive photoresist composition for microfabrication high in resolution and superior in film thickness dependency by using quinonediazidosulfonate of a polyhydroxy compound specified in structure as photosensitive material. CONSTITUTION: The positive photoresist composition contains an alkali-soluble resin and the 1,2-naphthoquinonediazido-5-(and/or-4-)sulfonate of a polyhydroxy compound represented by formula I in which each of R1 -R10 is H or a halogen atom or an alkyl, alkenyl, aryl, alkoxyl, or cycloalkyl group; each of (a)-(j) is, independently, 0, 1, 2, or 3; X is a -O-, -S-, -C-(=O)-, -C(=O)O-, -S(=O)-, or -S(=O)2 -group; W is a group of formula II; each of A and Y is a simple bond or a -C(R11 R12 )-; each of R11 and R2 is H atom or an alkyl group; and (k) is 0 or 1. |
