发明名称 COMPLIANT MONOPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE
摘要 <p>A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.</p>
申请公布号 WO2014008111(A1) 申请公布日期 2014.01.09
申请号 WO2013US48365 申请日期 2013.06.27
申请人 LUXVUE TECHNOLOGY CORPORATION 发明人 GOLDA, DARIUSZ;BIBL, ANDREAS
分类号 H01L29/00;H01L21/02 主分类号 H01L29/00
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