| 摘要 |
<p>Although a hole blocking layer has been hitherto formed by an inorganic semiconductor, a hole blocking layer (24) is formed by a conductive organic crystalline substance. Since an organic crystalline substance easily dissolves in an organic solvent, the hole blocking layer (24) produced from the conductive organic crystalline substance can be formed to have a large area by being coated with the organic solvent in which the organic crystalline substance has dissolved. More specifically, the hole blocking layer (24) can be evenly coated by a coating device such as a spin coater, a dispenser, or an ink jet. Further, if the ink jet is used, the hole blocking layer (24) can be pattern-formed pixel by pixel (with respect to each pixel electrode (11)). As a result, a structure having the hole blocking layer (24), for example, with a thickness of approximately several hundred nanometers to several micrometers can be easily implemented by coating without being formed in a vacuum.</p> |
