发明名称 |
COATING LIQUID FOR DOPANT DIFFUSION, METHOD FOR APPLYING SAME, METHOD FOR PRODUCING SEMICONDUCTOR USING SAME, AND SEMICONDUCTOR |
摘要 |
<p>This coating liquid for dopant diffusion contains, as a dopant source, an acid that is selected from among phosphoric acids and boric acids and an organic amine salt of an organic amine compound (alpha) having 1-4 nitrogen atoms. Consequently, there can be provided: a coating liquid for dopant diffusion, which is capable of providing a semiconductor having a high surface resistivity; a method for applying the coating liquid for dopant diffusion; a method for producing a semiconductor using the coating liquid for dopant diffusion; and a semiconductor.</p> |
申请公布号 |
WO2014007263(A1) |
申请公布日期 |
2014.01.09 |
申请号 |
WO2013JP68178 |
申请日期 |
2013.07.02 |
申请人 |
THE NIPPON SYNTHETIC CHEMICAL INDUSTRY CO., LTD. |
发明人 |
KATSUMA KATSUHIKO;AOKI YASUHIRO |
分类号 |
H01L21/225;H01L21/228;H01L31/04 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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