| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device including insulation gate field effect transistors having threshold values different from each other.SOLUTION: A semiconductor device manufacturing method comprises: forming a gate electrode material film in first and second regions 11a, 11b via a gate insulation film 14; performing anisotropic etching on the gate electrode material film to form a first gate electrode 15 and a first gate dummy 25 having a first coverage in the first region 11a; forming a second electrode 16 and a second gate dummy 26 having a second coverage in the second region 11b; forming conformal first insulation films on the first and second gate electrodes 15, 16; performing anisotropic etching on the first insulation film to form a first side wall film 17 with a first thickness W1 on the first gate electrode 15 and form a second side wall film 18 with a second thickness W2 larger than the first thickness W1 on the second gate electrode 16; and ion implanting impurities in a self-alignment manner to form a pair of first and second impurity diffusion layers 21a, 22a so as to sandwich the first and second gate electrodes 15, 16. |
