发明名称 |
Stress-Controlled HEMT |
摘要 |
A transistor device includes a heterostructure body having a source, a drain spaced apart from the source and a two-dimensional charge carrier gas channel between the source and the drain. The transistor device further includes a piezoelectric gate on the heterostructure body. The piezoelectric gate is operable to control the channel below the piezoelectric gate by increasing or decreasing a force applied to the heterostructure body responsive to a voltage applied to the piezoelectric gate. |
申请公布号 |
US2014008658(A1) |
申请公布日期 |
2014.01.09 |
申请号 |
US201213540711 |
申请日期 |
2012.07.03 |
申请人 |
SIEMIENIEC RALF;CURATOLA GILBERTO;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
SIEMIENIEC RALF;CURATOLA GILBERTO |
分类号 |
H01L29/778;H01L21/20;H01L29/20 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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