发明名称 |
Method for forming contact openings in a multi-layer structure that reduces overetching of the top conductive structure |
摘要 |
The overetching that occurs during the formation of contact openings in a substantially planarized layer of insulation material is substantially reduced by changing the thickness of the insulation material that is formed over the top conductive structure of a semiconductor device, and by forming the openings to the top conductive structure during the fabrication of a second metal layer rather than during the formation of a first metal layer.
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申请公布号 |
US5607873(A) |
申请公布日期 |
1997.03.04 |
申请号 |
US19960637072 |
申请日期 |
1996.04.24 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
CHEN, HUNG-SHENG;NGUYEN, TIM;MOBERLY, LARRY;TENG, CHIH S. |
分类号 |
H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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