SEMICONDUCTOR DEVICE AND CONNECTION STRUCTURE, AND MANUFACTURING METHODS THEREOF

摘要

PROBLEM TO BE SOLVED: To solve such a problem occurring in a mounting structure in which a semiconductor chip is sandwiched by Cu electrodes that chip cracking occurs in bonding by use of a hard and lead-free high temperature solder or a high-intensity nano Ag since heat stress in a shear direction occurring in the chip due to a thermal expansion difference is high, and thereby a lead-free semiconductor device which requires heat resistance at 250°C is not achieved, and to provide an inexpensive mounting structure which is excellent in thermoelectric property, temperature cycle reliability and high-temperature resistance by using a lead-free connection material having a high-melting point.SOLUTION: There is provided a connection structure in which a low thermal expansion plate is inserted between a semiconductor chip and a Cu electrode, and a chip side is bonded to the low thermal expansion plate by a lead-free high-temperature solder and a Cu electrode side is bonded to the low thermal expansion plate by a porous Ag layer having porosity of 20-70%.