SOLID STATE IMAGING ELEMENT, SOLID STATE IMAGING DEVICE, AND CAMERA DEVICE

摘要

The present technology relates to a solid state imaging element, solid state imaging device, and a camera device such that white spots can be made unnoticeable even with a small cell size. The solid state imaging element comprises: register which is formed as an n-type impurity region extending in a first direction; a read-out unit which is formed as a p-type impurity region extending in the same direction as the register and reads out electric charges from a photoelectric converter into the register; a horizontal element separator which is formed as a p-type impurity region extending in the same direction as the register and suppresses a leak of electric charges from the photoelectric converter; and a plurality of transfer electrodes for applying a voltage to change the potential distribution of the register. The total amount of n-type impurities constituting the register under a low level electrode of the plurality of transfer electrodes in which the standby voltage is a prescribed low voltage is smaller than the total amount of n-type impurities constituting the register under a middle level electrode in which the standby voltage is higher than the prescribed low voltage.