| 摘要 |
The present invention disclosure provides a super-long semiconductor nanowire structure. The super-long semiconductor nanowire structure is intermittently widened to prevent fractures in the super-long semiconductor nanowire structure. At the same time, the present invention further provides a method of making a super-long semiconductor nanowire structure. The method forms an intermittently widened super-long semiconductor nanowire structure using photolithography and etching. Because the super-long semiconductor nanowire structure is intermittently widened, fracturing of the super-long semiconductor nanowire structure during etching can be avoided, making it easier to form a super-long and ultra-thin semiconductor nanowire structure. |
