发明名称 |
Semiconductor devices including 3-D structures with support pad structures and related methods and systems |
摘要 |
A semiconductor device may include a semiconductor substrate and a plurality of three-dimensional capacitors on the semiconductor substrate. Each of the plurality of three-dimensional capacitors may include a first three-dimensional electrode, a capacitor dielectric layer, and a second three-dimensional electrode with the first three-dimensional electrode between the capacitor dielectric layer and the semiconductor substrate and with the capacitor dielectric layer between the first and second three-dimensional electrodes. A plurality of capacitor support pads may be provided with each capacitor support pad being arranged between adjacent first three-dimensional electrodes of adjacent three-dimensional capacitors with portions of the capacitor dielectric layers between the capacitor support pads and the semiconductor substrate. Related methods and apparatuses are also discussed. |
申请公布号 |
US8624354(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US20100829864 |
申请日期 |
2010.07.02 |
申请人 |
KIM SHIN-HYE;BYUN KYUNG-MUN;KIM HONG-RAE;CHOI GIL-HEYUN;HONG EUN-KEE;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SHIN-HYE;BYUN KYUNG-MUN;KIM HONG-RAE;CHOI GIL-HEYUN;HONG EUN-KEE |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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