发明名称 |
Integrated technology for partial air gap low K deposition |
摘要 |
A semiconductor device includes a semiconductor body and a low K dielectric layer overlying the semiconductor body. A first portion of the low K dielectric layer comprises a dielectric material, and a second portion of the low K dielectric layer comprise an air gap, wherein the first portion and the second portion are laterally disposed with respect to one another. A method for forming a low K dielectric layer is also disclosed and includes forming a dielectric layer over a semiconductor body, forming a plurality of air gaps laterally disposed from one another in the dielectric layer, and forming a capping layer over the dielectric layer and air gaps. |
申请公布号 |
US8624394(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US201113313542 |
申请日期 |
2011.12.07 |
申请人 |
CHANG HUNG JUI;LEE CHIH-TSUNG;CHOU YOU-HUA;JIAN SHIU-KO JANG;KUO MING-SHIOU;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANG HUNG JUI;LEE CHIH-TSUNG;CHOU YOU-HUA;JIAN SHIU-KO JANG;KUO MING-SHIOU |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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