发明名称 |
Non-volatile memory structure and method for fabricating the same |
摘要 |
The disclosure provides a non-volatile memory structure and a method for fabricating the same. The non-volatile memory structure includes a first contact connected to a first transistor. A second contact is connected to a second transistor. A resistance-changing memory material pattern covers and contacts the second contact but not the first contact. A top electrode contacts both the resistance-changing memory material pattern and the first contact. An area of the resistance-changing memory material pattern is substantially larger than an area of its interface with the second contact. |
申请公布号 |
US8624218(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US201213342171 |
申请日期 |
2012.01.02 |
申请人 |
CHEN FREDERICK T;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
CHEN FREDERICK T |
分类号 |
H01L47/00;G11C11/00;H01L21/20 |
主分类号 |
H01L47/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|