发明名称 Method for coating dielectric composition for fabricating thin-film transistors
摘要 An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.
申请公布号 US8623447(B2) 申请公布日期 2014.01.07
申请号 US20100957445 申请日期 2010.12.01
申请人 WU YILIANG;LIU PING;WIGGLESWORTH ANTHONY JAMES;HU NAN-XING;XEROX CORPORATION 发明人 WU YILIANG;LIU PING;WIGGLESWORTH ANTHONY JAMES;HU NAN-XING
分类号 B05D5/12;B05D3/02 主分类号 B05D5/12
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