| 摘要 |
Provided are methods for manufacturing an IC. According to one embodiment of the present invention, a method for manufacturing an IC includes a step of depositing a dielectric layer defining a plane. In the method, the dielectric layer is etched to form trenches. After that, a ruthenium-containing liner layer is deposited on the dielectric layer. Trenches is filled with a copper-containing metal. The method includes a step of recessing the copper-containing metal in each trench to form a space between the copper-containing metal and the plane. The space is filled with a capping layer. These layers are planarized to reach at least the plane. |
