SWITCHING ELEMENT AND MEMORY DEVICE EMPLOYING THE SAME

摘要

According to one embodiment of the present invention, for example, a switching element with excellent electrical properties and a switching property in about 400-450°C or more, and a memory device employing the same are provided. According to one side of the present invention, the switching element includes a first electrode; a second electrode; and a silicon-containing chalconitride layer formed between a first electrode and a second electrode. The silicon-containing chalconitride layer has excellent bidirectional switching performance for a long time in a very high temperature. [Reference numerals] (AA) Room temperature