SOLID-STATE IMAGE PICKUP APPARATUS AND METHOD FOR MANUFACTURING SAME

摘要

This solid-state image pickup apparatus is provided with a unit pixel cell formed on a semiconductor substrate (101). The unit pixel cell has a photoelectric conversion section, an accumulation region, a pinning layer, and a pixel transistor. The pixel transistor includes a gate electrode (131), a source diffusion layer (201), and a drain diffusion layer (202), which are formed on the semiconductor substrate (101). The source diffusion layer and/or the drain diffusion layer functions as the accumulation region. A pinning layer (205) has the lower side thereof and the pixel transistor channel (105) side thereof covered with the accumulation region, and the conductivity type of the accumulation region and that of the pinning layer are different from each other.