SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

Disclosed are a semiconductor device and a method of manufacturing the same. The semiconductor device may include a current blocking layer between a substrate and an active layer. The active layer may include an III-V material. For example, the substrate may be a silicon substrate. Also, a buffer layer may be formed between the substrate and the active layer. The buffer layer may include an n-type material layer. The current buffering layer may include a p-type material layer. The current blocking layer may include an III-V material. A mask layer having an opening part may be formed on the substrate. The current blocking layer and the active layer may be formed on the substrate exposed by the opening part.