发明名称 |
FILM OF POLYCRYSTALLINE SEMICONDUCTOR MATERIAL, METHOD OF MAKING SAME AND ORIENTING/UNDERCOOLING MOLDS THEREFOR, AND ELECTRONIC DEVICE |
摘要 |
<p>A film of polycrystalline semiconductor material, a method of making the film and orienting/undercooling molds that are useful in the method, and an electronic device comprising or prepared from the film. An orienting/undercooling mold that is impermeable to gas flow, the orienting/undercooling mold comprising a first orienting/undercooling surface configured with a basal surface consisting essentially of a low nucleation-potency material and with a plurality of contact points, at least some of the plurality of contact points consisting essentially of a monocrystalline semiconductor material for orienting crystal growth and controlling positions of nucleation sites on the orienting/undercooling surface, and any remainder of the plurality of contact points consisting essentially of a low nucleation-potency material for controlling heat transfer without functioning as nucleation sites; and wherein crystal lattices of at least 80 percent of the total number of the contact points consisting essentially of a monocrystalline semiconductor material are oriented parallel to each other.</p> |
申请公布号 |
WO2014001886(A1) |
申请公布日期 |
2014.01.03 |
申请号 |
WO2013IB01370 |
申请日期 |
2013.06.27 |
申请人 |
RGS DEVELOPMENT B.V. |
发明人 |
LEEMPOEL, PATRICK;PICHON, PIERRE-YVES;SCHOENECKER, AXEL |
分类号 |
C30B15/00;C30B28/10;H01L31/18 |
主分类号 |
C30B15/00 |
代理机构 |
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地址 |
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