发明名称 FILM OF POLYCRYSTALLINE SEMICONDUCTOR MATERIAL, METHOD OF MAKING SAME AND ORIENTING/UNDERCOOLING MOLDS THEREFOR, AND ELECTRONIC DEVICE
摘要 <p>A film of polycrystalline semiconductor material, a method of making the film and orienting/undercooling molds that are useful in the method, and an electronic device comprising or prepared from the film. An orienting/undercooling mold that is impermeable to gas flow, the orienting/undercooling mold comprising a first orienting/undercooling surface configured with a basal surface consisting essentially of a low nucleation-potency material and with a plurality of contact points, at least some of the plurality of contact points consisting essentially of a monocrystalline semiconductor material for orienting crystal growth and controlling positions of nucleation sites on the orienting/undercooling surface, and any remainder of the plurality of contact points consisting essentially of a low nucleation-potency material for controlling heat transfer without functioning as nucleation sites; and wherein crystal lattices of at least 80 percent of the total number of the contact points consisting essentially of a monocrystalline semiconductor material are oriented parallel to each other.</p>
申请公布号 WO2014001886(A1) 申请公布日期 2014.01.03
申请号 WO2013IB01370 申请日期 2013.06.27
申请人 RGS DEVELOPMENT B.V. 发明人 LEEMPOEL, PATRICK;PICHON, PIERRE-YVES;SCHOENECKER, AXEL
分类号 C30B15/00;C30B28/10;H01L31/18 主分类号 C30B15/00
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