| 摘要 |
Embodiments of the invention relate to methods for fabricating a passivation layer stack for photovoltaic devices. In one embodiment, the passivation layer stack comprises a first dielectric layer of AlxOy (or SiOx) and a second dielectric layer of SixNy having a refractive index less than 2.1. The passivation layer stack has contact openings formed therethrough by a series of pulsed laser beams having a wavelength of about 300-700 nm and a pulse width of about 0.01 nanosecond to about 3 nanoseconds. Lowering the refractive index of SixNy capping AlxOy (or SiOx) in the passivation layer stack makes pulsed laser beams less selective since the SixNy absorbs less laser energy. Therefore, desired regions of the entire passivation layer stack can be removed smoothly in a single pass of pulsed laser beams at a shorter wavelength without causing damage to the neighborhood of the passivation layer stack. |
