发明名称 |
MEMORY DEVICES WITH IN-BIT CURRENT LIMITERS |
摘要 |
A memory device includes a first conductive layer, a second conductive layer, an in-bit current limiter including a voltage controlled negative differential resistance (VC-NDR) layer in electrical contact with the first conductive layer and a memristor element in electrical contact with the VC-NDR layer and the second conductive layer. A method for programming a memory device that comprises a VC-NDR device is also provided. |
申请公布号 |
US2014003139(A1) |
申请公布日期 |
2014.01.02 |
申请号 |
US201213536602 |
申请日期 |
2012.06.28 |
申请人 |
PICKETT MATTHEW D.;RIBEIRO GILBERTO MEDEIROS |
发明人 |
PICKETT MATTHEW D.;RIBEIRO GILBERTO MEDEIROS |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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