| 摘要 |
A nonvolatile memory device includes (i) a semiconductor substrate, (ii) a channel formed over the substrate and extending in a first direction, (iii) a first NAND string arranged over a lower portion of a sidewall of the channel, (iv) a second NAND string arranged over an upper portion of the sidewall of the channel, and (v) an erasing conductive layer provided between the first and the second NAND strings and coupled to the sidewall of the channel. |
