直立式金氧半整流二极体及其制作方法,申请号TW100113255-传众专利搜索

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发明名称	直立式金氧半整流二极体及其制作方法
摘要
申请公布号	TWI422043	申请公布日期	2014.01.01
申请号	TW100113255	申请日期	2011.04.15
申请人	节能元件股份有限公司新北市新店区中正路501之17号	发明人	赵国梁;陈美玲;郭鸿鑫
分类号	H01L29/861;H01L21/329	主分类号	H01L29/861
代理机构		代理人	祁明辉台北市信义区忠孝东路5段510号22楼之2;叶明源台北市信义区忠孝东路5段510号22楼之2
主权项
地址	新北市新店区中正路501之17号

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